Поляризацiйнi залежностi фотоструму в p-GaAs

An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different pa...

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Бібліографічні деталі
Дата:2019
Автор: Rasulov, V. R.
Формат: Стаття
Мова:English
Опубліковано: Publishing house "Academperiodika" 2019
Онлайн доступ:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015
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Назва журналу:Ukrainian Journal of Physics

Репозитарії

Ukrainian Journal of Physics
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spelling ujp2-article-20190152019-04-20T08:04:12Z Polarization-Dependent Photocurrent in p-GaAs Поляризацiйнi залежностi фотоструму в p-GaAs Rasulov, V. R. photovoltaic effect semiconductor polarization photocurrent Hamiltonian momentum operator energy spectrum light absorption coefficient - An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared. Отримано вираз для спектральної i температурної залежностей струму фотонного механiзму лiнiйного фотогальванiчного ефекту в напiвпровiдниках типу арсенiду галiю дiркової провiдностi, зумовлений наявнiстю доданкiв рiзної парностi в ефективному гамiльтонiанi дiрок. Зiставленi теоретичнi та експериментальнi результати. Publishing house "Academperiodika" 2019-01-04 Article Article Peer-reviewed Рецензована стаття application/pdf https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015 10.15407/ujpe61.11.0987 Ukrainian Journal of Physics; Vol. 61 No. 11 (2016); 987 Український фізичний журнал; Том 61 № 11 (2016); 987 2071-0194 2071-0186 10.15407/ujpe61.11 en https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015/892 Copyright (c) 2019 Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine
institution Ukrainian Journal of Physics
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datestamp_date 2019-04-20T08:04:12Z
collection OJS
language English
topic_facet photovoltaic effect
semiconductor
polarization
photocurrent
Hamiltonian
momentum operator
energy spectrum
light absorption coefficient
-
format Article
author Rasulov, V. R.
spellingShingle Rasulov, V. R.
Поляризацiйнi залежностi фотоструму в p-GaAs
author_facet Rasulov, V. R.
author_sort Rasulov, V. R.
title Поляризацiйнi залежностi фотоструму в p-GaAs
title_short Поляризацiйнi залежностi фотоструму в p-GaAs
title_full Поляризацiйнi залежностi фотоструму в p-GaAs
title_fullStr Поляризацiйнi залежностi фотоструму в p-GaAs
title_full_unstemmed Поляризацiйнi залежностi фотоструму в p-GaAs
title_sort поляризацiйнi залежностi фотоструму в p-gaas
title_alt Polarization-Dependent Photocurrent in p-GaAs
description An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared.
publisher Publishing house "Academperiodika"
publishDate 2019
url https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015
work_keys_str_mv AT rasulovvr polarizationdependentphotocurrentinpgaas
AT rasulovvr polârizacijnizaležnostifotostrumuvpgaas
first_indexed 2025-10-02T01:15:35Z
last_indexed 2025-10-02T01:15:35Z
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