Поляризацiйнi залежностi фотоструму в p-GaAs
An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different pa...
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| Datum: | 2019 |
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| Format: | Artikel |
| Sprache: | English |
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Publishing house "Academperiodika"
2019
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| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015 |
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| Назва журналу: | Ukrainian Journal of Physics |
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ujp2-article-20190152019-04-20T08:04:12Z Polarization-Dependent Photocurrent in p-GaAs Поляризацiйнi залежностi фотоструму в p-GaAs Rasulov, V. R. photovoltaic effect semiconductor polarization photocurrent Hamiltonian momentum operator energy spectrum light absorption coefficient - An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared. Отримано вираз для спектральної i температурної залежностей струму фотонного механiзму лiнiйного фотогальванiчного ефекту в напiвпровiдниках типу арсенiду галiю дiркової провiдностi, зумовлений наявнiстю доданкiв рiзної парностi в ефективному гамiльтонiанi дiрок. Зiставленi теоретичнi та експериментальнi результати. Publishing house "Academperiodika" 2019-01-04 Article Article Peer-reviewed Рецензована стаття application/pdf https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015 10.15407/ujpe61.11.0987 Ukrainian Journal of Physics; Vol. 61 No. 11 (2016); 987 Український фізичний журнал; Том 61 № 11 (2016); 987 2071-0194 2071-0186 10.15407/ujpe61.11 en https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015/892 Copyright (c) 2019 Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine |
| institution |
Ukrainian Journal of Physics |
| baseUrl_str |
|
| datestamp_date |
2019-04-20T08:04:12Z |
| collection |
OJS |
| language |
English |
| topic_facet |
photovoltaic effect semiconductor polarization photocurrent Hamiltonian momentum operator energy spectrum light absorption coefficient - |
| format |
Article |
| author |
Rasulov, V. R. |
| spellingShingle |
Rasulov, V. R. Поляризацiйнi залежностi фотоструму в p-GaAs |
| author_facet |
Rasulov, V. R. |
| author_sort |
Rasulov, V. R. |
| title |
Поляризацiйнi залежностi фотоструму в p-GaAs |
| title_short |
Поляризацiйнi залежностi фотоструму в p-GaAs |
| title_full |
Поляризацiйнi залежностi фотоструму в p-GaAs |
| title_fullStr |
Поляризацiйнi залежностi фотоструму в p-GaAs |
| title_full_unstemmed |
Поляризацiйнi залежностi фотоструму в p-GaAs |
| title_sort |
поляризацiйнi залежностi фотоструму в p-gaas |
| title_alt |
Polarization-Dependent Photocurrent in p-GaAs |
| description |
An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared. |
| publisher |
Publishing house "Academperiodika" |
| publishDate |
2019 |
| url |
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015 |
| work_keys_str_mv |
AT rasulovvr polarizationdependentphotocurrentinpgaas AT rasulovvr polârizacijnizaležnostifotostrumuvpgaas |
| first_indexed |
2025-10-02T01:15:35Z |
| last_indexed |
2025-10-02T01:15:35Z |
| _version_ |
1851765149536354304 |