Енергiї утворення вакансiй у напiвпровiдниках, одержанi напiвемпiричними методами
Using the extended H¨uckel method and the methods based on thermochemical, thermodynamic, and electrophysical data, the energies of vacancy formation in AIIBVI, AIIIBV, and AIVBVI semiconductor crystals have been determined. A correlation of the obtained values with one another and with the literatu...
Збережено в:
| Дата: | 2019 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Publishing house "Academperiodika"
2019
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| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019016 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Using the extended H¨uckel method and the methods based on thermochemical, thermodynamic, and electrophysical data, the energies of vacancy formation in AIIBVI, AIIIBV, and AIVBVI semiconductor crystals have been determined. A correlation of the obtained values with one another and with the literature experimental and ab initio theoretical data is established. This testifies to the adequacy of the applied methods and to a possibility of using them for the estimation of the defect concentration in semiconductors. |
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