2025-02-22T21:03:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019016%22&qt=morelikethis&rows=5
2025-02-22T21:03:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019016%22&qt=morelikethis&rows=5
2025-02-22T21:03:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T21:03:55-05:00 DEBUG: Deserialized SOLR response
Енергiї утворення вакансiй у напiвпровiдниках, одержанi напiвемпiричними методами

Енергiї утворення вакансiй у напiвпровiдниках, одержанi напiвемпiричними методами

Using the extended H¨uckel method and the methods based on thermochemical, thermodynamic, and electrophysical data, the energies of vacancy formation in AIIBVI, AIIIBV, and AIVBVI semiconductor crystals have been determined. A correlation of the obtained values with one another and with the literatu...

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Bibliographic Details
Main Authors: Horichok, I. V., Hurhula, H. Ya., Prokopiv, V. V., Pylyponiuk, M. A.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2019
Subjects:
semiconductors
point defects
defect formation energy
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019016
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2025-02-22T21:03:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019016%22&qt=morelikethis
2025-02-22T21:03:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019016%22&qt=morelikethis
2025-02-22T21:03:55-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T21:03:55-05:00 DEBUG: Deserialized SOLR response

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