Вплив легування атомами Cu, Sn і In на оптичнi властивостi монокристалiв AgGaGe3Se8
The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (Eg ≈ 2.09–2.15 eV at T = 300 K) with the p-type conductivity, and whose optical parameters depend on the dopant...
Saved in:
| Date: | 2019 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2019
|
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019063 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Ukrainian Journal of Physics |
Institution
Ukrainian Journal of Physics| Summary: | The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (Eg ≈ 2.09–2.15 eV at T = 300 K) with the p-type conductivity, and whose optical parameters depend on the dopant nature and concentration. On the basis of this model and making allowance for specific features of disordered systems, the obtained experimental results are explained. |
|---|