Оптичнi та електрофiзичнi властивостi гетероструктури 95% In2O3 + 5% SnO2/ns-Si

• Дата: 2019
• Автори: Vinichenko, V. A., Buchenko, V. V., Goloborodko, N. S., Lendel, V. V., Lushkin, A. E., Telega, V. N.
• Формат: Стаття
• Мова: English; Ukrainian
• Опубліковано: Publishing house "Academperiodika" 2019
• Теми: current-voltage characteristics; absorption spectrum; thin films; transparent oxides; -; вольт-ампернi характеристики; спектр поглинання; тонкi плiвки; прозорi оксиди
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019105
• Назва журналу: Ukrainian Journal of Physics

Optical and electrical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructures with films 6 and 12 nm in thickness deposited on a nanostructured silicon surface by the magnetron sputtering have been considered. It is shown that the 6-nm film is characterized by several peaks in the optical absorpti...