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Оптичнi та електрофiзичнi властивостi гетероструктури 95% In2O3 + 5% SnO2/ns-Si

Оптичнi та електрофiзичнi властивостi гетероструктури 95% In2O3 + 5% SnO2/ns-Si

Optical and electrical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructures with films 6 and 12 nm in thickness deposited on a nanostructured silicon surface by the magnetron sputtering have been considered. It is shown that the 6-nm film is characterized by several peaks in the optical absorpti...

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Bibliographic Details
Main Authors: Vinichenko, V. A., Buchenko, V. V., Goloborodko, N. S., Lendel, V. V., Lushkin, A. E., Telega, V. N.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2019
Subjects:
current-voltage characteristics
absorption spectrum
thin films
transparent oxides
-
вольт-ампернi характеристики
спектр поглинання
тонкi плiвки
прозорi оксиди
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019105
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https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019105

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