Дослiдження рекомбiнацiйних параметрiв сонячного кремнiю методом спектроскопiї поверхневої фото-ерс
Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etch...
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| Date: | 2019 |
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| Main Author: | |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2019
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019161 |
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| Journal Title: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Summary: | Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etched (real) surface, structures with the implanted recombination-active Fe+ impurity, SiO2–Si structures with the surface-induced inversion channel, and structures with the diffused p–n junction. A comparison with the formulas obtained for the spectra of direct, VSC, and inverse, 1/VSC, photovoltages in terms of the absorption coefficient k and its reciprocal quantity 1/k is carried out. The surface and bulk recombination rates and the distributions of recombination-active impurities, structural technological impurities, and defects in the near-surface charge region of solar silicon are calculated. |
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