Дослiдження рекомбiнацiйних параметрiв сонячного кремнiю методом спектроскопiї поверхневої фото-ерс
Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etch...
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| Date: | 2019 |
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| Main Author: | |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2019
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019161 |
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| Journal Title: | Ukrainian Journal of Physics |