Влияние ИК подсветки на рассеяние электронов проводимости в облученных протонами с энергией 25 МэВ кристаллах n-Si

• Date: 2019
• Main Authors: Pagava, T. A., Chkhartishvili, L. S., Maisuradze, N. I., Beridze, M. G., Khocholava, D. Z.
• Format: Article
• Language: English; Ukrainian
• Published: Publishing house "Academperiodika" 2019
• Subjects: кремний n-типа; облучение протонами; метод фото-Холл-эффекта
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019222
• Journal Title: Ukrainian Journal of Physics

The photo-Hall effect is studied in specimens of n-Si single crystals with the electron concentration N = 6 × 1013 cm−3 irradiated with 25-MeV protons at a temperature of 300 K. The irradiated specimens revealed an anomalously high value of the electron Hall mobility, which can be explained by the f...