Влияние ИК подсветки на рассеяние электронов проводимости в облученных протонами с энергией 25 МэВ кристаллах n-Si
The photo-Hall effect is studied in specimens of n-Si single crystals with the electron concentration N = 6 × 1013 cm−3 irradiated with 25-MeV protons at a temperature of 300 K. The irradiated specimens revealed an anomalously high value of the electron Hall mobility, which can be explained by the f...
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| Date: | 2019 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2019
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019222 |
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| Journal Title: | Ukrainian Journal of Physics |