Залежнiсть енергiї екситонних переходiв у наноплiвках AlxGa1−xAs/GaAs/AlxGa1−xAs вiд товщини, концентрацiї та температури
The energy of transition into the ground excitonic state for a quasi-two-dimensional (nanofilm) semiconductor nanoheterostructure with single quantum well and its dependences on the thickness, temperature, and composition of the barrier medium are calculated in the dielectric continuum approximation...
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| Date: | 2019 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2019
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019238 |
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| Journal Title: | Ukrainian Journal of Physics |