Залежнiсть енергiї екситонних переходiв у наноплiвках AlxGa1−xAs/GaAs/AlxGa1−xAs вiд товщини, концентрацiї та температури

• Date: 2019
• Main Authors: Kondryuk, D. V., Kramar, V. M.
• Format: Article
• Language: English; Ukrainian
• Published: Publishing house "Academperiodika" 2019
• Subjects: наногетероструктура; квантова яма; екситон; екситон-фононна взаємодiя
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019238
• Journal Title: Ukrainian Journal of Physics

The energy of transition into the ground excitonic state for a quasi-two-dimensional (nanofilm) semiconductor nanoheterostructure with single quantum well and its dependences on the thickness, temperature, and composition of the barrier medium are calculated in the dielectric continuum approximation...