2025-02-22T09:53:38-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019272%22&qt=morelikethis&rows=5
2025-02-22T09:53:38-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019272%22&qt=morelikethis&rows=5
2025-02-22T09:53:38-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T09:53:38-05:00 DEBUG: Deserialized SOLR response
Дослiдження взаємодiї атомiв елементiв IV та V груп з гранями Si(001), Ge(001)

Дослiдження взаємодiї атомiв елементiв IV та V груп з гранями Si(001), Ge(001)

Adsorption and diffusion processes of atoms of the IV- (Si, Ge) and V-th (As, Sb, Bi) groups on the Si(001) and Ge(001) surfaces have been simulated, by using quantum chemistry techniques. The mechanism of how the adsorption of elements of the V-th group affects the Si(001) surface is considered. Th...

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Bibliographic Details
Main Author: Afanasieva, T. V.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2019
Subjects:
adsorption
diffusion
semiconductor surface
oxidation
-
адсорбцiя
дифузiя
поверхня напiвпровiдника
окиснення
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019272
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https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019272

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