Дослiдження взаємодiї атомiв елементiв IV та V груп з гранями Si(001), Ge(001)
Adsorption and diffusion processes of atoms of the IV- (Si, Ge) and V-th (As, Sb, Bi) groups on the Si(001) and Ge(001) surfaces have been simulated, by using quantum chemistry techniques. The mechanism of how the adsorption of elements of the V-th group affects the Si(001) surface is considered. Th...
Збережено в:
| Дата: | 2019 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2019
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019272 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Adsorption and diffusion processes of atoms of the IV- (Si, Ge) and V-th (As, Sb, Bi) groups on the Si(001) and Ge(001) surfaces have been simulated, by using quantum chemistry techniques. The mechanism of how the adsorption of elements of the V-th group affects the Si(001) surface is considered. The literature concerning the adsorption of atoms of the V-th group (As, Sb, Bi) and their co-adsorption with oxygen on the Si(001) surface and the diffusion of Bi addimers on the Si(001) surface and Si and Ge ad-dimers on the Ge(001) one is analyzed. The results obtained demonstrate a high capability of quantum chemistry methods to provide the unique information about the interaction between adsorbates and the semiconductor surface. |
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