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Дослiдження взаємодiї атомiв елементiв IV та V груп з гранями Si(001), Ge(001)
Adsorption and diffusion processes of atoms of the IV- (Si, Ge) and V-th (As, Sb, Bi) groups on the Si(001) and Ge(001) surfaces have been simulated, by using quantum chemistry techniques. The mechanism of how the adsorption of elements of the V-th group affects the Si(001) surface is considered. Th...
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| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2019
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019272 |
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| Summary: | Adsorption and diffusion processes of atoms of the IV- (Si, Ge) and V-th (As, Sb, Bi) groups on the Si(001) and Ge(001) surfaces have been simulated, by using quantum chemistry techniques. The mechanism of how the adsorption of elements of the V-th group affects the Si(001) surface is considered. The literature concerning the adsorption of atoms of the V-th group (As, Sb, Bi) and their co-adsorption with oxygen on the Si(001) surface and the diffusion of Bi addimers on the Si(001) surface and Si and Ge ad-dimers on the Ge(001) one is analyzed. The results obtained demonstrate a high capability of quantum chemistry methods to provide the unique information about the interaction between adsorbates and the semiconductor surface. |
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