Дослiдження взаємодiї атомiв елементiв IV та V груп з гранями Si(001), Ge(001)

Adsorption and diffusion processes of atoms of the IV- (Si, Ge) and V-th (As, Sb, Bi) groups on the Si(001) and Ge(001) surfaces have been simulated, by using quantum chemistry techniques. The mechanism of how the adsorption of elements of the V-th group affects the Si(001) surface is considered. Th...

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Bibliographic Details
Date:2019
Main Author: Afanasieva, T. V.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2019
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019272
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics