2025-02-22T10:36:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019273%22&qt=morelikethis&rows=5
2025-02-22T10:36:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2019273%22&qt=morelikethis&rows=5
2025-02-22T10:36:11-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T10:36:11-05:00 DEBUG: Deserialized SOLR response

Порушена симетрiя дзеркального вiдображення та дiамагнiтний коефiцiєнт носiїв, захоплених латеральними напiвпровiдниковими молекулами з квантовими точками

The theoretical study of the reflection asymmetry impact on the electron and hole localizations in self-assembled InGaAs/GaAs semiconductor lateral quantum dot molecules is made. The previously proposed mapping method is used to simulate the ground-state electron (hole) wave function and the energy...

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Bibliographic Details
Main Author: Voskoboynikov, O.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2019
Subjects:
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019273
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