Порушена симетрiя дзеркального вiдображення та дiамагнiтний коефiцiєнт носiїв, захоплених латеральними напiвпровiдниковими молекулами з квантовими точками
The theoretical study of the reflection asymmetry impact on the electron and hole localizations in self-assembled InGaAs/GaAs semiconductor lateral quantum dot molecules is made. The previously proposed mapping method is used to simulate the ground-state electron (hole) wave function and the energy...
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| Date: | 2019 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2019
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| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019273 |
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| Journal Title: | Ukrainian Journal of Physics |