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Особливості формування омічних контактів до n+-InN

Особливості формування омічних контактів до n+-InN

We report about a study of the formation and current transport mechanism of ohmic contacts to n+-InN with electron concentrations of 2×1018, 8×1018, and 4×1019 cm−3. Pd/Ti/Au ohmic contacts are formed by the proposed approach of simultaneous magnetron metal deposition and in-situ temperature anneali...

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Bibliographic Details
Main Authors: Sai, P. O., Safryuk-Romanenko, N. V., But, D. B., Cywiński, G., Boltovets, N. S., Brunkov, P. N., Jmeric, N. V., Ivanov, S. V., Shynkarenko, V. V.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2019
Subjects:
ohmic contacts
rapid thermal annealing
in-situ thermal annealing
contact resistivity
dislocation density
metal shunts
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019292
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https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019292

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