Особливості формування омічних контактів до n+-InN
We report about a study of the formation and current transport mechanism of ohmic contacts to n+-InN with electron concentrations of 2×1018, 8×1018, and 4×1019 cm−3. Pd/Ti/Au ohmic contacts are formed by the proposed approach of simultaneous magnetron metal deposition and in-situ temperature anneali...
Saved in:
| Date: | 2019 |
|---|---|
| Main Authors: | Sai, P. O., Safryuk-Romanenko, N. V., But, D. B., Cywiński, G., Boltovets, N. S., Brunkov, P. N., Jmeric, N. V., Ivanov, S. V., Shynkarenko, V. V. |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2019
|
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019292 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Ukrainian Journal of Physics |
Institution
Ukrainian Journal of PhysicsSimilar Items
-
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019) -
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019) -
Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016) -
Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016) -
Методи створення і властивості омічних контактів до фосфіду індію (огляд)
by: Кудрик, Я.Я.
Published: (2015)