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Взаємодія халькогенідних плівок As4Se96 з електронним пучком при використанні їх у ролі електронних резистів

The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron b...

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Bibliographic Details
Date:2020
Main Authors: Bilanych, B. V., Shylenko, O., Latyshev, V. M., Feher, A., Bilanych, V. S., Rizak, V. M., Komanicky, V.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2020
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019391
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics

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