Вплив невпорядкованої атомної структури на швидкість оже-рекомбінації в InGaN сполуках p-типу
The influence of the atomic disorder on the Auger recombination rate in p-InGaN alloys has been studied. The disorder was simulated using a 4 × 4 × 4 supercell in which In and Ga atoms taken in a required stoichiometric ratio were randomly distributed over the supercell sites. A comparison between t...
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| Datum: | 2020 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English Ukrainian |
| Veröffentlicht: |
Publishing house "Academperiodika"
2020
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019407 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | The influence of the atomic disorder on the Auger recombination rate in p-InGaN alloys has been studied. The disorder was simulated using a 4 × 4 × 4 supercell in which In and Ga atoms taken in a required stoichiometric ratio were randomly distributed over the supercell sites. A comparison between the Auger recombination rates calculated in the framework of the supercell and virtual-crystal approximations showed that a large number of allowed interband transitions induced by the atomic disorder strongly increases the Auger recombination rate in wide-band-gap p-InGaN alloys. |
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