2025-02-22T21:27:18-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2020043%22&qt=morelikethis&rows=5
2025-02-22T21:27:18-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2020043%22&qt=morelikethis&rows=5
2025-02-22T21:27:18-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T21:27:18-05:00 DEBUG: Deserialized SOLR response
Механізм утворення дефектів у термоелектричному матеріалі Zr1 – xVxNiSn

Механізм утворення дефектів у термоелектричному матеріалі Zr1 – xVxNiSn

Crystal and electronic structure, transport and energy state characteristics of the Zr1−xVx NiSn (0.01 ≤ x ≤ 0.1) thermoelectric material are investigated in the 80–400 K temperature interval. A mechanism of simultaneous generation of structural defects of the acceptor and donor nature, which determ...

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Bibliographic Details
Main Authors: Romaka, V.V., Stadnyk, Yu.V., Rogl, P.F., Romaka, L.P., Krayovskyy, V.Ya., Horpenyuk, A.Ya., Horyn, A.M.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2021
Subjects:
напiвпровiдники
кристалiчнi ґратки
дефекти
semiconductors
crystal lattices
defects
Semiconductors and Insulators
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2020043
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2025-02-22T21:27:18-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2020043%22&qt=morelikethis
2025-02-22T21:27:18-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2020043%22&qt=morelikethis
2025-02-22T21:27:18-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T21:27:18-05:00 DEBUG: Deserialized SOLR response

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