Фундаментальні обмеження для довжини каналу провідності MOSFET з урахуванням реального вигляду бар’єрного потенціалу
The minimal length of the channel in the MOSFET, which is the principal device of modern electronics, has been estimated. The account of the real potential behavior in the channel demonstrates that, when some voltage is applied to the drain, electrons tunnel through a region that is essentially shor...
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| Date: | 2021 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2021
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2020329 |
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| Journal Title: | Ukrainian Journal of Physics |