Фізичні властивості сенсорних структур на основі кремнієвого p−n-переходу з зустрічними гребінчатими контактами на тильній поверхні
The influence of the adsorption of water molecules on the photosensitivity of a silicon p–n junction with interdigitated back contacts has been studied. It has been shown that the examined structures can be used for the creation of effective chemical sensors.
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| Date: | 2012 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian English |
| Published: |
Publishing house "Academperiodika"
2012
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021131 |
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| Journal Title: | Ukrainian Journal of Physics |