Дослідження рекомбінаційних і електричних властивостей кристалів p-Si, опромінених електронами
Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime...
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| Date: | 2012 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2012
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021264 |
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| Journal Title: | Ukrainian Journal of Physics |