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Дослідження рекомбінаційних і електричних властивостей кристалів p-Si, опромінених електронами

Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime...

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Bibliographic Details
Date:2012
Keywords:keywords
Main Authors: Pagava, T.A., Khocholava, D.Z., Maisuradze, N.I., Chkhartishvili, L.S.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2012
Subjects:
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021264
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics

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