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Модифікація оптичних властивостей пористих шарів напівпровідників AIIIBV, отриманих методом анодного травлення

Morphology investigations (atomic force microscopy (AFM) and scanning electron microscopy (SEM)), study of Raman scattering (RS) and photoluminescence (PL) have been performed to characterize a series of AIIIBV materials (GaAs, GaP, InP) with an electrochemically prepared porous surface layer. It ha...

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Bibliographic Details
Date:2012
Main Authors: Dmitruk, N., Berezovska, N., Dmitruk, I., Serdyuk, V., Sabataityte, J., Simkiene, I.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2012
Subjects:
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021325
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics

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