Вплив легування атомами B, Si та P на електронні властивості кристала AlN з домішкою Mn
The partial and total electron state densities of Mn-doped AlN crystals co-doped with B, Si, and P atoms are calculated for the up and down orientations of the spin moment. The comparison of the electron state densities of pure and Mn-doped AlN crystals shows that the Mn impurity leads to the appear...
Збережено в:
| Дата: | 2022 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська Англійська |
| Опубліковано: |
Publishing house "Academperiodika"
2022
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022077 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | The partial and total electron state densities of Mn-doped AlN crystals co-doped with B, Si, and P atoms are calculated for the up and down orientations of the spin moment. The comparison of the electron state densities of pure and Mn-doped AlN crystals shows that the Mn impurity leads to the appearance of hybridized energy states with p- and d-symmetry in the forbidden band. The co-doping with B, Si, and P atoms results in a change of the electron state density and the spin magnetic moments on all atoms of the crystal. |
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| DOI: | 10.15407/ujpe56.6.564 |