Обернення хвильового фронту в InSb(Cu)

It is shown that the doping of narrow-band semiconductor InSb by copper leads to an enhancement of the phase conjugation efficiency at low intensities of laser radiation.

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Bibliographic Details
Date:2022
Main Authors: Linnik, L.F., Linnik, L.G., Staryi, S.V.
Format: Article
Language:Ukrainian
English
Published: Publishing house "Academperiodika" 2022
Subjects:
-
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022088
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
Description
Summary:It is shown that the doping of narrow-band semiconductor InSb by copper leads to an enhancement of the phase conjugation efficiency at low intensities of laser radiation.