Дифузія атома кисню у приповерхневі шари інтерфейсу GexSi1-x/Si(001)
Ab initio calculations have been carried out to verify a possibility for an oxygen atom to transit from the bridge bond between the addimer atoms and atoms in the second subsurface layer to the bond between atoms belonging to the second and third subsurface layers of the GexSi1–x/Si(001) interface i...
Gespeichert in:
| Datum: | 2022 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainian English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2022
|
| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022103 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Ukrainian Journal of Physics |
Institution
Ukrainian Journal of Physics| Zusammenfassung: | Ab initio calculations have been carried out to verify a possibility for an oxygen atom to transit from the bridge bond between the addimer atoms and atoms in the second subsurface layer to the bond between atoms belonging to the second and third subsurface layers of the GexSi1–x/Si(001) interface in the cases where one to three oxygen atoms are adsorbed. Such a transition was found to be unfavorable in the case where pure, Si–Si, and mixed, Si–Ge, addimers are present at the GexSi1–x/Si(001) interface. If only pure Ge–Ge addimers are present at this interface, the diffusion of a single oxygen atom is possible, with the corresponding diffusion barrier being 2.09 eV. Pure Ge–Ge addimers at the GexSi1–x/Si(001) interface favor the oxygen diffusion into the bulk to a greater extent than pure Si–Si and mixed Si–Ge addimers do. |
|---|