Дифузія атома кисню у приповерхневі шари інтерфейсу GexSi1-x/Si(001)

• Date: 2022
• Main Authors: Afanasieva, T.V., Greenchuck, A.A., Koval’, I.P., Nakhodkin, M.G.
• Format: Article
• Language: Ukrainian; English
• Published: Publishing house "Academperiodika" 2022
• Subjects: -
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022103
• Journal Title: Ukrainian Journal of Physics

Ab initio calculations have been carried out to verify a possibility for an oxygen atom to transit from the bridge bond between the addimer atoms and atoms in the second subsurface layer to the bond between atoms belonging to the second and third subsurface layers of the GexSi1–x/Si(001) interface i...