Радіаційно-стимульована перебудова дефектів у кристалах кремнію

• Datum: 2022
• Hauptverfasser: Pavlyk, B.V., Lys, R.M., Hrypa, A.S., Slobodzyan, D.P., Khvyshchun, I.O., Shykoryak, I.A., Didyk, R.I.
• Format: Artikel
• Sprache: Ukrainian; English
• Veröffentlicht: Publishing house "Academperiodika" 2022
• Schlagworte: -
• Online Zugang: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022155
• Назва журналу: Ukrainian Journal of Physics

Physical and mathematical models of the radiation-induced ordering of a defect structure in silicon crystals are proposed. Thesemodels involve an increase of the diffusion coefficient of interstitial silicon in the irradiation field and a reduction of the defect lifetime at irradiation doses below 2...