2025-02-22T16:59:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2022156%22&qt=morelikethis&rows=5
2025-02-22T16:59:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2022156%22&qt=morelikethis&rows=5
2025-02-22T16:59:28-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-22T16:59:28-05:00 DEBUG: Deserialized SOLR response
Вплив одновісної деформації на заповнення рівня, пов’язаного з А-центром, у кристалах n-Si
Single crystals of n-Si with the initial charge carrier concentration of 1.24 × 1014 cm–3 which were irradiated with Co60 γ-quanta to a dose of 3.8 × 1017 quantum/cm2 have been studied. The piezoresistance of γ-irradiated n-Si crystals has beenmeasured in the case where X ║ J ║ [100] and X ║ J ║ [11...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | Ukrainian English |
| Published: |
Publishing house "Academperiodika"
2022
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022156 |
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