Вплив одновісної деформації на заповнення рівня, пов’язаного з А-центром, у кристалах n-Si
Single crystals of n-Si with the initial charge carrier concentration of 1.24 × 1014 cm–3 which were irradiated with Co60 γ-quanta to a dose of 3.8 × 1017 quantum/cm2 have been studied. The piezoresistance of γ-irradiated n-Si crystals has beenmeasured in the case where X ║ J ║ [100] and X ║ J ║ [11...
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| Дата: | 2022 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Ukrainian English |
| Опубліковано: |
Publishing house "Academperiodika"
2022
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022156 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Single crystals of n-Si with the initial charge carrier concentration of 1.24 × 1014 cm–3 which were irradiated with Co60 γ-quanta to a dose of 3.8 × 1017 quantum/cm2 have been studied. The piezoresistance of γ-irradiated n-Si crystals has beenmeasured in the case where X ║ J ║ [100] and X ║ J ║ [110]. The technique of calculations of the drift rate is presented, and the filling degree α of deep levels is estimated. The variation of the energy gap between the deep energy level EC – 0.17 eV and the lower valleys in the conduction band in n-Si crystals induced by an uniaxial elastic deformation along the crystallographic directions [100] and [110] is calculated. The average value of the coefficient α is determined at various temperatures. |
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