Вплив одновісної деформації на заповнення рівня, пов’язаного з А-центром, у кристалах n-Si

• Date: 2022
• Main Authors: Fedosov, A.V., Luniov, S.V., Fedosov, S.A.
• Format: Article
• Language: Ukrainian; English
• Published: Publishing house "Academperiodika" 2022
• Subjects: -
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022156
• Journal Title: Ukrainian Journal of Physics

Single crystals of n-Si with the initial charge carrier concentration of 1.24 × 1014 cm–3 which were irradiated with Co60 γ-quanta to a dose of 3.8 × 1017 quantum/cm2 have been studied. The piezoresistance of γ-irradiated n-Si crystals has beenmeasured in the case where X ║ J ║ [100] and X ║ J ║ [11...