Виготовлення тонких плівок з Mn4Si7/Si(111), CrSi2/Si(111) та CoSi2/Si(111) і оцінка їхніх оптично прямих та непрямих заборонених зон

Now, silicon-based heterostructured nanocomposites are of great interest. Despite the fact that silicon semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural films are new materials, the study of which began relatively recent...

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Bibliographic Details
Date:2024
Main Authors: Dovranov, K.T., Normuradov, M.T., Davranov, Kh.T., Bekpulatov, I.R.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2024
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023088
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
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Summary:Now, silicon-based heterostructured nanocomposites are of great interest. Despite the fact that silicon semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural films are new materials, the study of which began relatively recently. We will produce and investigate the properties of heterostructured Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin films using infrared and ultraviolet spectroscopies. Absorption, transmission, and diffuse reflectance spectra are obtained applying FTIR spectroscopy instruments and a UV spectrophotometer. The band gap energies calculated from the transmission spectra are in the interval 0.32–1.31 eV for films deposited on the silicon substrates and in the interval 0.36–1.25 eV for the glass substrates.