Зменшення рекомбінаційних втрат у дифузійних приповерхневих емітерних шарах фоточутливих кремнієвих структур n+-p-p+

When creating an n+-emitter in photosensitive structures of the n+-p-p+ type, the structure of its near-surface layer after the diffusion operation is found to be substantially damaged with increased recombination losses. The influence of additional growing-etching cycles of the silicon dioxide laye...

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Bibliographic Details
Date:2023
Main Authors: Kostylyov, V.P., Sachenko, A.V., Slusar, T.V., Chernenko, V.V.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2023
Subjects:
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023178
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics