Структурні та морфологічні властивості нанометрових вуглецевих плівок, отриманих розпиленням графіту електронним променем

Nanometer-thick carbon films on metal (copper, steel) and silicon substrates are obtained by the electron sputtering of graphite. The substrate temperature was varied from 350 to 600 оС with an increment of 50 оС, and the sputtering time from 1 to 10 s. The produced carbon films are studied using Ra...

Full description

Saved in:
Bibliographic Details
Date:2023
Main Authors: Yukhymchuk, V.O., Dzhagan, V.M., Isaieva, O.F., Lytvyn, P.M., Korchovyi, A.A., Sabov, T.M., Lozinskii, V.B., Yefanov, V.S., Osokin, V.O., Kurapov, Yu.A.
Format: Article
Language:Ukrainian
English
Published: Publishing house "Academperiodika" 2023
Subjects:
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023217
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Ukrainian Journal of Physics

Institution

Ukrainian Journal of Physics
Description
Summary:Nanometer-thick carbon films on metal (copper, steel) and silicon substrates are obtained by the electron sputtering of graphite. The substrate temperature was varied from 350 to 600 оС with an increment of 50 оС, and the sputtering time from 1 to 10 s. The produced carbon films are studied using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and electron paramagnetic resonance (EPR) spectroscopy. From the analysis of Raman spectra, it is found that, at the temperatures of metal substrates below 550 оС, the carbon films formed on them are amorphous and have a graphite-like structure at higher substrate temperatures. At the same time, the films formed on silicon substrates at temperatures below 600 оС are amorphous. The results obtained from the Raman spectra correlate with the XPS data. It is shown that both the temperature and the substrate material (metal or silicon) affect the film morphology. As the substrate temperature increases from 350 to 600 оС, the average size of surface irregularities increases for carbon films on both the metal and silicon substrates. The EPR studies show that the available structural film defects, which are responsible for the manifestation of the so-called defect bands (D and D′ ones) in the Raman spectra, are not paramagnetic.