Моделювання механізмів транспорту носіїв заряду в HgCdTe та InSb фотодіодах на ділянку спектра 3–5 мкм
An important problem for HgCdTe and InSb photodiodes is the excess dark current, which dominates at operating reverse bias voltages and exceeds the generation-recombination current in the space charge region. As a rule, the excess current has the bulk and surface components and causes the 1/f -type...
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| Date: | 2025 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2025
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023463 |
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| Journal Title: | Ukrainian Journal of Physics |