Оже-рекомбінація в полярних InGaN/GaN квантових ямах
Auger recombination rate in polar InxGa1−xN/GaN quantum wells has been calculated in the framework of the full-band model. The key components of the model are the band structures of bulk binary nitrides (GaN and InN) obtained by the empirical pseudopotential method and the band structures of InxGa1−...
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| Date: | 2025 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2025
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023703 |
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| Journal Title: | Ukrainian Journal of Physics |