Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) за авторством Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.

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The effect of ion implantation on structural damage in compositionally graded AlGaN layers за авторством Liubchenko, O.I., Kladko, V.P., Stanchu, H.V., Sabov, T.M., Melnik, V.P., Kryvyi, S.B., Belyaev, A.Ye.

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Mechanism of AlN film formation at thermochemical nitridization of sapphire за авторством Kaltaev, Kh.Sh.-ogly, Nizhankovskiy, S.V., Sidelnikova, N.S., Rom, M.A., Dan'ko, A.Ya., Dobrotvorskaya, M.V., Belyaev, A.Ye., Strelchuk, V.V., Kolomys, A.F.

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