Харвестер відкритої науки НАН України

Акустооптические свойства стекол GexS100–x и акустооптический модулятор на их основе

von Bletskan, D. I., Vakulchak, V. V., Fedelesh, V. I.
Veröffentlicht 2014

Electronic structure of PbSnS₃ and PbGeS₃ semiconductor compounds with the mixed cation coordination

von Bletskan, M.M., Bletskan, D.I., Kabatsii, V.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Electronic structure of 2H-SnSe₂: ab initio modeling and comparison with experiment

von Bletskan, D.I., Glukhov, K.E., Frolova, V.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures

von Bletskan, D.I., Lukyanchuk, O.R., Bletskan, O.D.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Electron structure of the equilibrium and metastable phases in superionic Li₂SiS₃

von Bletskan, D.I., Vakulchak, V.V., Glukhov, K.E., Mykaylо, O.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)