Influence of intrinsic point defects and substitutional impurities (Cl, I → S) on the electronic structure of 2H-Sn₂ von Bletskan, D.I., Frolova, V.V.

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Electronic structure of PbSnS₃ and PbGeS₃ semiconductor compounds with the mixed cation coordination von Bletskan, M.M., Bletskan, D.I., Kabatsii, V.M.

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Electronic structure of 2H-SnSe₂: ab initio modeling and comparison with experiment von Bletskan, D.I., Glukhov, K.E., Frolova, V.V.

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Electronic structure, optical, and photoelectrical properties of crystalline Si₂Te₃ von Bletskan, D.I., Vakulchak, V.V., Studenyak, I.P.

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Акустооптические свойства стекол GexS100–x и акустооптический модулятор на их основе von Bletskan, D. I., Vakulchak, V. V., Fedelesh, V. I.

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Electronic structure of Ag₈GeS₆ von Bletskan, D.I., Studenyak, I.P., Vakulchak, V.V., Lukach, A.V.

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Electron structure of the equilibrium and metastable phases in superionic Li₂SiS₃ von Bletskan, D.I., Vakulchak, V.V., Glukhov, K.E., Mykaylо, O.A.

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