Concerning the depletion width of a radial - junction and its influence on electrical properties of the diode за авторством Borblik, V.L.

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Electrostatics of the nanowire radial -- diode за авторством Borblik, V.L.

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About manifestation of the piezojunction effect in diode temperature sensors за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.

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Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

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A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

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Revealing the hopping mechanism of conduction in heavily doped silicon diodes за авторством Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.

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Effect of mechanical stress on operation of diode temperature sensors за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.

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Negative magnetoresistance of heavily doped silicon p-n junction за авторством Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.

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New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures за авторством Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M., Aleinikov, A. B.

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Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown за авторством Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.

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Self-consistent method for optimization of parameters of diode temperature sensors за авторством Kulish, N.R., Shwarts, Yu.M., Borblik, V.L., Venger, Ye.F., Sokolov, V.N.

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Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties за авторством Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.

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