Properties of junction diodes under conditions of bisotropic strains

за авторством Borblik, V.L.
Опубліковано 2009

About manifestation of the piezojunction effect in diode temperature sensors

за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
Опубліковано 2003

Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2007

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2009

Revealing the hopping mechanism of conduction in heavily doped silicon diodes

за авторством Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.
Опубліковано 2005

Effect of mechanical stress on operation of diode temperature sensors

за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
Опубліковано 2002

Negative magnetoresistance of heavily doped silicon p-n junction

за авторством Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2011

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

за авторством Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.
Опубліковано 2012

Self-consistent method for optimization of parameters of diode temperature sensors

за авторством Kulish, N.R., Shwarts, Yu.M., Borblik, V.L., Venger, Ye.F., Sokolov, V.N.
Опубліковано 1999

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

за авторством Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано 2014