Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC von Shanina, B.D., Bratus', V.Ya.

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Influence of boron doping on the photosensitivity of cubic silicon carbide von Rodionov, V.N., Bratus', V.Ya., Voronov, S.O.

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Thermal annealing and evolution of defects in neutron-irradiated cubic SiC von Bratus, V.Ya., Melnyk, R.S., Shanina, B.D., Okulov, S.M.

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Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment von Dan’ko, V.A., Bratus, V.Ya., Indutnyi, I.Z., Lisovskyy, I.P., Zlobin, S.O., Michailovska, K.V., Shepeliavyi, P.E.

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