The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation by Dolgolenko, A.P.

Get full text

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

Get full text

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

Get full text

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons by Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

Get full text

Peculiarities of charge carriers transport in submicron Si-Ge whiskers by Druzhinin, A.A., Dolgolenko, A.P., Ostrovskii, I.P., Khoverko, Yu.N., Nichkalo, S.I., Kogut, Iu.R.

Get full text

Seebeck’s effect in p-SiGe whisker samples by Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.

Get full text

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide by Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.

Get full text