The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation

за авторством Dolgolenko, A.P.
Опубліковано 2006

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

за авторством Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Опубліковано 2011

The radiation hardness of pulled silicon doped with germanium

за авторством Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Опубліковано 2007

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

за авторством Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Опубліковано 2007

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

за авторством Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Опубліковано 2004

Peculiarities of charge carriers transport in submicron Si-Ge whiskers

за авторством Druzhinin, A.A., Dolgolenko, A.P., Ostrovskii, I.P., Khoverko, Yu.N., Nichkalo, S.I., Kogut, Iu.R.
Опубліковано 2014

Seebeck’s effect in p-SiGe whisker samples

за авторством Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.
Опубліковано 2011

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

за авторством Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Опубліковано 2001