The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation von Dolgolenko, A.P.

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The kinetic of point defect transformation during the annealing process in electron-irradiated silicon von Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.

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Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons von Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.

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Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.

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Peculiarities of charge carriers transport in submicron Si-Ge whiskers von Druzhinin, A.A., Dolgolenko, A.P., Ostrovskii, I.P., Khoverko, Yu.N., Nichkalo, S.I., Kogut, Iu.R.

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Seebeck’s effect in p-SiGe whisker samples von Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.

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Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide von Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.

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