Харвестер відкритої науки НАН України

Залежнiсть енергiї екситонних переходiв у наноплiвках AlxGa1−xAs/GaAs/AlxGa1−xAs вiд товщини, концентрацiї та температури...

von Kondryuk, D. V., Kramar, V. M.
Veröffentlicht 2019

Spatial confinement, self-polarization and exciton–phohon interaction effect on the location of exciton line in lead iodide nanofilms

von Kramar, V.M., Pugantseva, O.V., Derevyanchuk, A.V.
Veröffentlicht in Физика низких температур (2014)

Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms

von Kondryuk, D.V., Kramar, V.M., Kroitor, O.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor

von Derevyanchuk, A.V., Pugantseva, O.V., Kramar, V.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs

von Kondryuk, D.V., Derevyanchuk, A.V., Kramar, V.M., Kudryavtsev, A.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Temperature changes of the exciton transition energy in lead di-iodide nanofilms

von Pugantseva, O.V., Kramar, V.M., Fesiv, I.V., Kudryavtsev, O.O.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs

von Kondryuk, D.V., Derevyanchuk, A.V., Kramar, V.M., Kudryavtsev, A.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)