Search Results - Lalayants, A.I.
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Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties by Atroshchenko, L.V., Galkin, S.N., Galchinetskii, L.P., Lalayants, A.I., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)Get full text
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Doping methods and properties of the solid solutions on AIᴵᴵBⱽᴵ crystals base by Atroshchenko, L.V., Gal'chinetskii, L.P., Galkin, S.N., Katrunov, K.A., Lalayants, A.I., Lisetskaya, E.K., Rybalka, I.A., Ryzhikov, V.D., Silin, V.I., Starzhinskii, N.G., Voronkin, E.F.
Published in Functional Materials (2005)Get full text
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Related Subjects
X-ray induced luminescence
рентгенолюмінесценція
Characterization and properties
Technology
ZnSxSe1-x
ZnSxSe1–x bulk crystals
ZnSxSe1–x solid solution
ZnSxSe1−x bulk crystals
band gap
chalcogenide scintillators
composite scintillator
crystals of AIIBVI compounds
direct transitions
indirect transitions
luminescence centers
mixed crystals
radiation detector
scintillation characteristics
scintillator
sodium chloride
solid phase synthesis
zinc sulfide
Об’ємнi кристали ZnSxSe1−x
детектор випромінювання
заборонена зона
змішані кристали
композитний сцинтилятор
кристаллы AIIBVI-соединений
непрямі переходи
плавень