Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes за авторством Latreche, A.

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Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes за авторством Latreche, A.

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Determination of the temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes за авторством Latreche, A.

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Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime за авторством Latreche, A.

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