Харвестер відкритої науки НАН України

Optical study of thermally induced phase separation in evaporated SiOx films

von Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of deposition rate and substrate temperature on structure and optical features of NiO thin film

von Oberemok, O.S., Sabov, T.M., Lisovskyy, I.P., Khacevych, I.M., Gudymenko, O.Yo., Nikirin, V.A., Voitovych, M.V.
Veröffentlicht in Functional Materials (2016)

Вплив обробки у парах HF на структуру та люмінесцентні властивості поруватих Si/SiОx нанокомпозитів

von Dan’ko, V.A., Zlobin, S.O., Indutnyi, I.Z., Lisovskyy, I.P., Litovchenko, L.G., Michailovska, K.V., Shepeliavyi, P.E.
Veröffentlicht 2025

Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

von Dan’ko, V.A., Bratus, V.Ya., Indutnyi, I.Z., Lisovskyy, I.P., Zlobin, S.O., Michailovska, K.V., Shepeliavyi, P.E.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

von Lisovskyy, I.P., Litovchenko, V.G., Zlobin, S.O., Voitovych, M.V., Khatsevich, I.M., Indutnyy, I.Z., Shepeliavyi, P.E., Kolomys, O.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Electron field emission from SiOx films

von Evtukh, А.А., Indutnyy, I.Z., Lisovskyy, I.P., Litvin, Yu.M., Litovchenko, V.G., Lytvyn, P.M., Mazunov, D.O., Rassamakin, Yu.V., Shepeliavyi, P.E.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)